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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION With TO-66 package Low collector saturation voltage Excellent safe operating area 2N4900 complement to type 2N4912 APPLICATIONS Designed for driver circuits,switching and amplifier applications PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N4898 2N4899 2N4900 Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=ae ) SYMBOL VCBO I VCEO E SEM HANG NC Collector-base voltage 2N4899 2N4900 2N4898 2N4899 Collector-emitter voltage 2N4900 Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25ae PARAMETER 2N4898 Open emitter CTOR NDU ICO CONDITIONS VALUE -40 -60 -80 -40 -60 -80 UNIT V Open base V VEBO IC ICM IB PD Tj Tstg Open collector -5 -1.0 -4.0 -1.0 25 150 -65~200 ae ae V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 7.0 UNIT ae /W Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER 2N4898 VCEO(SUS) Collector-emitter sustaining voltage 2N4899 2N4900 VCEsat VBEsat VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage 2N4898 ICEO Collector cut-off current 2N4899 2N4900 IC=-1A; IB=-0.1A IC=-1A ;IB=-0.1A IC=-1A ; VCE=-1V VCE=-20V; IB=0 VCE=-30V; IB=0 VCE=-40V; IB=0 IC=-0.1A ;IB=0 2N4898 2N4899 2N4900 SYMBOL CONDITIONS MIN -40 -60 -80 TYP. MAX UNIT V -0.6 -1.3 -1.3 V V V -0.5 mA ICEX ICBO IEBO hFE-1 hFE-2 hFE-3 COB fT Collector cut-off current Collector cut-off current CHAN IN Emitter cut-off current DC current gain DC current gain DC current gain Output capacitance Transition frequency SEMIC GE VEB=-5V; IC=0 IC=-1.0A ; VCE=-1V VCE=Rated VCEO; VBE(off)=1.5V TC=150ae VCB=Rated VCBO; IE=0 O CTOR NDU -0.1 -1.0 -0.1 -1.0 40 20 10 100 3.0 100 mA mA mA IC=-50mA ; VCE=-1V IC=-500mA ; VCE=-1V IE=0;VCB=-10V;f=1MHz IC=-250mA;VCE=-10V pF MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2N4898 2N4899 2N4900 CHAN IN SEMIC GE Fig.2 outline dimensions O CTOR NDU 3 |
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